SEMICONDUCTOR RECTIFIER

Service Details:

Features:

• Superectifier structure for high reliability condition 
• Cavity-free glass-passivated junction 
• Fast switching for high efficiency 
• Low leakage current, typical IR less than 0.2 μA 
• High forward surge capability 
• Solder dip 275 °C max. 10 s, per JESD 22-B106 
• Typical Applications: For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. 
• Mechanical Data Case: DO-201AD, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 
• Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test 

Service Details:

Avalanche Diode Features:

• International standard package JEDEC DO-203 AA 
• Planar passivated chips Applications 
• Supplies for DC power equipment 
• DC supply for PWM inverter 
• Field supply for DC motors 
• Battery DC power supplies Advantages 
• Space and weight savings 
• Simple mounting 
• Improved temperature & power cycling 

Reduced protection circuits Symbol Conditions Maximum Ratings IFRMS IFAVM TVJ = TVJM TC = 150°C; 180° sine 18 11 A A PRSM TVJM, tp = 10 ms 4.5 kW IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 250 265 A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 220 A I 2 t TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 310 295 A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 190 A2s TVJ TVJM Tstg -40...+180 180 -40...+180 °C °C °C Md mounting torque 2.2...2.8 Nm Weight typical 5 g A C DO-203 AA A = Anode, C = Cathode C A VRSM V V(BR)min V VRRM V Type 1300 1300 1200 DSA 9-12F 1700 1750 1600 DSA 9-16F 1900 1950 1800 DSA 9-18F 7.8 10.3 2.3 0.5 SW 11 19.7 11.5 0.5 10.5 4 2 0.8 max. 2 4.4 2.6 Ø 2 M5 4 Dimensions in mm (1 mm = 0.0394") Replacements see below Type Replacements DSA9-12F DSI30-12A DSA9-16F DSI30-16A DSA9-18F contact factory © 2019 IXYS All rights reserved 2 - 2 20190130b DSA 9 IXYS reserves the right to change limits, test conditions and dimensions. phase-out 10-3 10-2 10-1 100 101 0 50 100 150 200 250 300 1 10 2 3 4 5 6 7 8 9 200 400 600 800 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 0 5 10 15 20 0 5 10 15 20 25 0 50 100 150 200 0 10-3 10-2 10-1 100 101 102 103 104 0 1 2 3 4 5 I 2 t I FSM A I F A VF t s t ms PF W I F(AV)M A Tamb °C t s ZthJH K/W A 2 s 0 50 100 150 200 250 0 5 10 15 20 25 I F(AV)M Tc A °C V Fig. 6 Transient thermal impedance junction to heatsink Fig. 1 Forward characteristics Fig. 2 Surge overload current I FSM: crest value.

Service Details:

Features:

• Superectifier structure for high reliability condition 
• Ideal for automated placement 
• Low forward voltage drop 
• Low leakage current 
• High forward surge capability 
• Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C 
• AEC-Q101 qualified 
• Typical Application For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. 
• Mechanical Data Case: GF1 (DO-214BA), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“X” denotes revision code e.g. A, B) 
• Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and HE3 suffix meet JESD 201 class 2 whisker test 

Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 μA TJ max. 175 °C Package GF1 (DO-214BA) Circuit configuration Single GF1 (DO-214BA) Superectifier® Cathode Anode D 3 3 D 3D Models MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL GF1A GF1B GF1D GF1G GF1J GF1K GF1M UNIT Device marking code GA GB GD GG GJ GK GM Max. repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Max. RMS voltage VRMS 35 70 140 280 420 560 700 V Max. DC blocking voltage VDC 50 100 200 400 600 800 1000 V Max. average forward rectified current at TL = 125 °C IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Operating junction and storage temperature range TJ, TSTG -65 to +175 °C GF1A, GF1B, GF1D, GF1G, GF1J, GF1K, GF1.