Transistors

Service Details:

Dual P-Channel 30-V (D-S) Mosfet.
Features:

• Halogen-free 
• TrenchFET® Power MOSFET 
• 100 % UIS Tested 

Applications:

• Load Switches 
• Notebook PCs 
• Desktop PCs 
• Game Stations 

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Application:

• Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications  Resonant mode power suppliesOR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant VDSS 60V RDS(on) typ. 1.65m max 2.00m ID (Silicon Limited) 295A ID (Package Limited) 195A Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature TO-220AB IRFB7530PbF D2 Pak IRFS7530PbF TO-262 IRFSL7530PbF S D G S D G S D G D G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7530PbF TO-220 Tube 50 IRFB7530PbF IRFSL7530PbF TO-262 Tube 50 IRFSL7530PbF IRFS7530PbF Tube 50 IRFS7530PbF Tape and Reel Left 800 IRFS7530TRLPbF D2 -Pak

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Features:

• 500-mA-Rated Collector Current (Single Output) 
• High-Voltage Outputs: 50 V 
• Output Clamp Diodes 
• Inputs Compatible With Various Types of Logic 
• Relay-Driver Applications 2 Applications 
• Relay Drivers 
• Stepper and DC Brushed Motor Drivers 
• Lamp Drivers 
• Display Drivers (LED and Gas Discharge) 
• Line Drivers 
• Logic Buffers 3 Description The ULx200xA devices are high-voltage, high-current Darlington transistor arrays. 
• Each consists of seven NPN Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. 
• The collector-current rating of a single Darlington pair is 500 mA. 
• The Darlington pairs can be paralleled for higher current capability. 
• Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. 
• For 100-V (otherwise interchangeable) versions of the ULx2003A devices, see the SLRS023 data sheet for the SN75468 and SN75469 devices. 
• The ULN2002A device is designed specifically for use with 14-V to 25-V PMOS devices. 
• Each input of this device has a Zener diode and resistor in series to control the input current to a safe limit. 
• The ULx2003A devices have a 2.7-k series base resistor for each Darlington pair for operation directly with TTL or 5-V CMOS devices. 
• The ULx2004A devices have a 10.5-k series base resistor to allow operation directly from CMOS devices that use supply voltages of 6 V to 15 V. 
• The required input current of the ULx2004A device is below that of the ULx2003A devices, and the required voltage is less than that required by the ULN2002A device. 

Service Details:

NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications.

Features:

• High Speed - tf = 0.5 s (Max)
• High Current - IC(max) = 30 Amps
• Low Saturation - VCE(sat) = 2.5 V (Max) @ IC = 20 Amps
• Pb-Free Package is Available Maximum Ratings (Note 1) Rating Symbol Value Unit
• Collector-Emitter Voltage VCEO 90 Vdc
• Collector-Base Voltage VCBO 150 Vdc
• Collector-Emitter Voltage VCEV 150 Vdc
• Emitter-Base Voltage VEBO 7 Vdc
• Collector Current - Continuous
• Peak (Note 2)ICICM2030Adc
• Base Current - Continuous IB 5 AdcTotal Device Dissipation @ TC = 25CDerate above 25CPD 1400.8WW/C
• Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 C
• Thermal Characteristics Characteristics Symbol Max Unit Thermal Resistance, Junction-to-Case RJC 1.25 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. 
• Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
• Indicates JEDEC Registered Data.
• Pulse Test: Pulse Width  10 ms, Duty Cycle  50%.

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Benefits:

• Advanced Process Technology Surface Mount (IRF9530NS)  Low-profile through-hole(IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofile applications. S D G S D G D TO-262 Pak IRF9530NLPbF Base part number Package Type Standard Pack Form Quantity IRF9530NLPbF TO-262 Tube 50 IRF9530NLPbF (Obsolete) IRF9530NSPbF D2-Pak Tape and Reel Left 800 IRF9530NSTRLPbF.

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